Electronic Structure of La2-xSrxCuO4 in the Vicinity of the Superconductor-Insulator Transition
arXiv:cond-mat/9902048 · doi:10.1103/PhysRevB.62.4137
Abstract
We report on the result of angle-resolved photoemission (ARPES) study of LaSrCuO (LSCO) from an optimally doped superconductor () to an antiferromagnetic insulator (). Near the superconductor-insulator transition (SIT) , spectral weight is transferred with hole doping between two coexisting components, suggesting a microscopic inhomogeneity of the doped-hole distribution. For the underdoped LSCO (), the dispersive band crossing the Fermi level becomes invisible in the direction unlike BiSrCaCuO. These observations may be reconciled with the evolution of holes in the insulator into fluctuating stripes in the superconductor.
arXiv comment5 pages, 6 EPS figures, use RevTex, to be published in Phys. Rev. B
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