Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors

Abstract

We argue that in cuprate physics there are two types, hole content per CuO${}_2$ plane ($P_{pl}$) and the corresponding hole content per unit volume ($P_{3D}$), of hole-doping concentrations for addressing physical properties that are two-dimensional (2D) and three-dimensional (3D) in nature, respectively. We find that superconducting transition temperature ($T_c$) varies systematically with $P_{3D}$ as a superconducting \textquotedblleft $dome$\textquotedblright with a universal optimal hole-doping concentration $P_{3D}^{opt.}$ = 1.6 $\times$ 10${}^{21}$ cm${}^{-3}$ for single-layer high temperature superconductors. We suggest that $P_{3D}^{opt.}$ determines the upper bound of the electronic energy of underdoped single-layer high-$T_c$ cuprates.

8 pages, 4 figures; added references ;accepted for the publication in Supercond. Sci. Technol ; Ref. 13 is revised

References in corpus (1)

• The "Bohr" Model for the High Tc Superconductivity

Cited by in corpus (3)

• Unified electronic phase diagram for hole-doped high-Tc cuprates
• Intrinsic electronic superconducting phases at 60 K and 90 K in double-layer YBa${}_2$Cu${}_3$O${}_{6+\delta }$
• Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-$T_c$ superconductors