Systematic evolution of the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6} in a wide doping range

Abstract

Recently we have succeeded in growing a series of high-quality Bi_{2}Sr_{2-x}La_{x}CuO_{6} crystals in a wide range of carrier concentrations. The data of ρ_{ab}(T) and R_H(T) of those crystals show behaviors that are considered to be "canonical" to the cuprates. The optimum zero-resistance T_c has been raised to as high as 38 K, which is almost equal to the optimum T_c of La_{2-x}Sr_{x}CuO_{4}.

2 pages, 2 figures, to be published in Physics C (Proceedings of the International Conference on Materials and Mechanisms of Superconductivity, High Temperature Superconductors VI (M2S-HTSC-VI), Houston, Feb 20-25, 2000)

References in corpus (1)

• Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi_{2}Sr_{2-x}La_{x}CuO_{6}

Cited by in corpus (4)

• Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors
• On the quantitative determination of hole-concentration in high-temperature cuprate superconductors
• Comparison of the Hole Concentration determined by Transport Measurement for the Hole-doped Cuprate Superconductors
• Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-$T_c$ superconductors