Universal scaling of c-axis dc conductivity for the underdoped hightemperature cuprate superconductors
arXiv:1010.0833 · doi:10.1016/j.ssc.2010.10.003
Abstract
Coexistence of the "metallic-like" in-plane and the "semiconducting-like" out-of-plane (caxis) dc conductivities (σc), generating a huge anisotropy in the underdoped hightemperature cuprate superconductors (HTCS), defies our current understanding of metal. In this report we present an intrinsic doping dependence of σc. We find that the σc for the underdoped HTCS is universally scaled to the σc at the optimal doped-hole concentration. The universal scaling behavior suggests that there are three intrinsic processes contribute to σc: (i) the doping-dependent-activated gap; (ii) the exponential doping dependences and (iii) the tunneling between adjacent CuO2 block layers. They are the essential underlying characteristics of the c-axis transport for all HTCSs.
14 pages, 3 figures. Accepted for the publication in Solid State Communications
References in corpus (3)
Cited by in corpus (5)
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- Universal intrinsic doping behavior of in-plane dc conductivity for hole-doped high-temperature cuprate superconductors
- On the quantitative determination of hole-concentration in high-temperature cuprate superconductors