Analysis of Degradation in Graphene-based Spin Valves
arXiv:0911.3252 · doi:10.1143/APEX.2.123004
Abstract
The degradation mechanisms of multilayer graphene spin valves are investigated. The spin injection signals in graphene spin valves have been reported to be linearly dependent on the drain bias voltage, which indicates that the spin polarization of injected spins in graphene is robust against the bias voltage. We present that the disappearance of this robustness is due to two different degradation mechanisms of the spin valves. Our findings indicate that the disappearance of the robustness is due to degradation rather than an intrinsic characteristic of graphene. Thus, the robustness can be greatly enhanced if degradation can be prevented.
14 pages, 4 figures (To appear in Applied Physics Express)
References in corpus (5)
- Graphene Spin Transistor
- Spin Injection into a Graphene Thin Film at Room Temperature
- Electronic spin drift in graphene field effect transistors
- Electrical Detection of Spin Precession in Single Layer Graphene Spin Valves with Transparent Contacts
- Electrical Spin Injection into Silicon using MgO Tunnel Barrier