Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers

Abstract

Motivated by recent STM experiments, we present a theoretical study of the electronic and magnetic properties of the Mn-induced acceptor level obtained by substituting a single Ga atom in the (110) surface layer of GaAs or in one of the atoms layers below the surface. We employ a kinetic-exchange tight-binding model in which the relaxation of the (110) surface is taken into account. The acceptor wave function is strongly anisotropic in space and its detailed features depend on the depth of the sublayer in which the Mn atom is located. The local-density-of-states (LDOS) on the (110) surface associated with the acceptor level is more sensitive to the direction of the Mn magnetic moment when the Mn atom is located further below the surface. We show that the total magnetic anisotropy energy of the system is due almost entirely to the dependence of the acceptor level energy on Mn spin orientation, and that this quantity is strongly dependent on the depth of the Mn atom.

14 pages, 13 figures

References in corpus (7)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions
• Spatial structure of an individual Mn acceptor in GaAs
• Multiband tight-binding model of local magnetism in GaMnAs
• STM images of sub-surface Mn atoms in GaAs: evidence of hybridization of surface and impurity states
• Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
• Imaging of the [Mn2+(3d5) + hole] complex in GaAs by Cross-sectional Scanning Tunneling Microscopy

Cited by in corpus (12)

• Visualizing Critical Correlations near the Metal-Insulator Transition in Ga1-xMnxAs
• Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors
• Probing the wavefunction of the surface states in Bi${}_2$Se${}_3$ topological insulator: a realistic tight-binding approach
• Magnetic interactions of substitutional Mn pairs in GaAs
• Chern number spins of Mn acceptor magnets in GaAs
• Electronic structure and magnetic properties of Mn and Fe impurities near GaAs (110) surface
• Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field
• Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach
• Trend of the magnetic anisotropy for individual Mn dopants near the (110) GaAs surface
• Spin dynamics of Mn impurities and their bound acceptors in GaAs
• Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors
• Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies