Tuning of structure inversion asymmetry by the $\delta$-doping position in (001)-grown GaAs quantum wells

Abstract

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.

arXiv comment4 pages 2 figures

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• Magneto-gyrotropic effects in semiconductor quantum wells (review)
• Zero-bias spin separation
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