Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs

Abstract

We present an atomistic 3D simulation study of the performance of graphene nanoribbon (GNR) Schottky barrier (SB) FETs and transistors with doped reservoirs (MOSFETs) by means of the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green's function (NEGF) formalism. Ideal MOSFETs show slightly better electrical performance, for both digital and THz applications. The impact of non-idealities on device performance has been investigated, taking into account the presence of single vacancy, edge roughness and ionized impurities along the channel. In general, MOSFETs show more robust characteristics than SBFETs. Edge roughness and single vacancy defect largely affect performance of both device types.

to appear in IEEE Trans. on Electron Devices

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Cited by in corpus (3)

• Charge Transport in Disordered Graphene-Based Low Dimensional Materials
• Modeling edge effects in Graphene Nanoribbon Field-effect Transistors with real and mode space methods
• Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering