Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors

Abstract

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering as a mechanism for the readout of donor spin-states in silicon based quantum computers.

14 pages, 3 figures. Correction made to figure3(b)

References in corpus (5)

• Electrical detection of 31P spin quantum states
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Stark Tuning of Donor Electron Spins in Silicon
• Davies ENDOR revisited: Enhanced sensitivity and nuclear spin relaxation
• Electrical readout of a spin qubit without double occupancy

Cited by in corpus (9)

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• Hybrid solid state qubits: the powerful role of electron spins
• Single-atom doping for quantum device development in diamond and silicon
• Quantum non-demolition measurements of single donor spins in semiconductors
• Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
• Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields
• Spin-dependent scattering in a silicon transistor
• Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
• Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs