output
20062024
most citedDiscretized Topological Hall Effect Emerging from Skyrmions in Constricted Geometry

111 citations

7 papers

cond-mat.mes-hall2024

Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics

Takaya Abe, Motoya Shinozaki, Kazuma Matsumura +6

GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, the current collapse poses a challenge to the application of GaN FE…

cond-mat.mes-hall2023★ 3 cited

Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs

Kazuma Matsumura, Takaya Abe, Takahito Kitada +5

Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length de…

eess.SP2021★ 14 cited

An analysis of voltage source inverter switches fault classification using short time Fourier transform

Mustafa Manap, Srete Nikolovski, Aleksandr Skamyin +3

The dependability of power electronics systems, such as three-phase inverters, is critical in a variety of applications. Different types of failures that occur in an inverter circu…

cond-mat.mes-hall2020★ 8 cited

Formation of quantum dots in GaN/AlGaN FETs

Tomohiro Otsuka, Takaya Abe, Takahito Kitada +3

GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transis…

cond-mat.str-el2015★ 111 cited

Discretized Topological Hall Effect Emerging from Skyrmions in Constricted Geometry

N. Kanazawa, M. Kubota, A. Tsukazaki +6

We investigate the skyrmion formation process in nano-structured FeGe Hall-bar devices by measurements of topological Hall effect, which extracts the winding number of a spin textu…

cond-mat.mtrl-sci2008★ 58 cited

Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures

A. Tsukazaki, A. Ohtomo, M. Kawasaki +9

We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures…