816 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- École PolytechniqueFR110 papers
- Centre National de la Recherche ScientifiqueFR103 papers
- Université Paris-SaclayFR21 papers
- École Normale Supérieure Paris-SaclayFR13 papers
- Sapienza University of RomeIT10 papers
- Université Paris-SudFR8 papers
- Center for MathematicaL studies and their ApplicationsFR7 papers
- Institut Polytechnique de ParisFR6 papers
- Interdisciplinary Scientific Center J.-V. PonceletRU6 papers
- Northeastern UniversityUS6 papers
- Sorbonne UniversitéFR6 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR5 papers
8 papers · 1 filter
Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface
H. Li, L. Martinelli, F. Cadiz +4
A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) mapping on statically deflected p-type silicon cantilevers is used to study the mechanic…
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
W. Hahn, J. -M. Lentali, P. Polovodov +11
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measu…
Ambipolar spin-spin coupling in p-GaAs
F. Cadiz, D. Paget, A. C. H. Rowe +1
A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupli…
Effect of the Pauli principle on photoelectron spin transport in GaAs
F. Cadiz, D. Paget, A. C. H. Rowe +3
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a funct…
Spin relaxometry of single nitrogen-vacancy defects in diamond nanocrystals for magnetic noise sensing
J. -P. Tetienne, T. Hingant, L. Rondin +7
We report an experimental study of the longitudinal relaxation time () of the electron spin associated with single nitrogen-vacancy (NV) defects hosted in nanodiamonds (ND). W…
Nanoscale magnetic field mapping with a single spin scanning probe magnetometer
L. Rondin, J. -P. Tetienne, P. Spinicelli +7
We demonstrate quantitative magnetic field mapping with nanoscale resolution, by applying a lock-in technique on the electron spin resonance frequency of a single nitrogen-vacancy…
Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces
D. Vu, S. Arscott, E. Peytavit +7
The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied…
Binding energy of negatively charged exciton in a semiconductor quantum well: the role of interface defects
Luis C. O. Dacal, R. Ferreira, G. Bastard +1
We present a model to take into account the interface defects contribution on the binding energy of charged exciton in GaAs/AlGaAs quantum wells. The dependence of…