672 citations · 1.3k across the 13 of their papers we have counts for
13 papers
X-ray diffraction study of epitaxial CuO nanostructures obtained through post-deposition annealing of Cu on SrTiO(001)
Maurizio de Santis, Veronique Langlais, Lucio Martinelli +3
Orientation, structure and morphology in the early growth stages of CuO films on strontium titanate were studied by synchrotron radiation X-ray diffraction. Nanostructured CuO film…
Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
Mylène Sauty, Nicolas M. S. Lopes, Jean-Philippe Banon +7
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield o…
Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
Daniel Myers, Andrew Espenlaub, Kristina Gelzinyte +5
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spect…
Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)"16x2" surfaces
N. K. Lewis, Y. Lassailly, L. Martinelli +8
The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatur…
Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface
H. Li, L. Martinelli, F. Cadiz +4
A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) mapping on statically deflected p-type silicon cantilevers is used to study the mechanic…
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
W. Hahn, J. -M. Lentali, P. Polovodov +11
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measu…