672 citations · 1.2k across the 13 of their papers we have counts for
14 papers
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Huai-Chin Huang, Shih-Min Chen, Claude Weisbuch +2
Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombinatio…
Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy
Mylène Sauty, Natalia Alyabyeva, Cheyenne Lynsky +7
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The techn…
Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
Mylène Sauty, Nicolas M. S. Lopes, Jean-Philippe Banon +7
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield o…
Wigner-Weyl description of light absorption in disordered semiconductor alloys using the localization landscape theory
Jean-Philippe Banon, Pierre Pelletier, Claude Weisbuch +2
The presence of disorder in semiconductors can dramatically change their physical properties. Yet, models faithfully accounting for it are still scarce and computationally ineffici…
Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shape defects and Random Alloy Fluctuation in Quantum Wells
Cheng-Han Ho, James S. Speck, Claude Weisbuch +1
For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage is larger than expected, especially for green LEDs. This is mainly due to the larg…
Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells
Huan-Ting Shen, Claude Weisbuch, James S. Speck +1
For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and curre…