672 citations · 1.2k across the 13 of their papers we have counts for
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Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy
Mylène Sauty, Natalia Alyabyeva, Cheyenne Lynsky +7
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The techn…
Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
Mylène Sauty, Nicolas M. S. Lopes, Jean-Philippe Banon +7
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield o…
Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
Daniel Myers, Andrew Espenlaub, Kristina Gelzinyte +5
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spect…
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
W. Hahn, J. -M. Lentali, P. Polovodov +11
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measu…