Ambipolar spin-spin coupling in p${}^{+}$-GaAs

Abstract

A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created by the differential movement of the photoelectrons and the photoholes. Like the Coulomb spin drag, it is a pure spin coupling that does not affect charge diffusion. Experimentally, the coupling is studied in $p^{+}$ GaAs using polarized microluminescence. The coupling manifests itself as an excitation power dependent reduction in the spin polarization at the excitation spot \textit{without} any change of the spatially averaged spin polarization.

References in corpus (6)

• Ambipolar spin diffusion and D'yakonov-Perel' spin relaxation in GaAs quantum wells
• Imaging charge and spin diffusion of minority carriers in GaAs
• Imaging ambipolar diffusion of photocarriers in GaAs thin films
• The effect of Pauli blockade on spin-dependent diffusion in a degenerate electron gas
• Interacting drift-diffusion theory for photoexcited electron-hole gratings in semiconductor quantum wells
• Optical orientation in bipolar spintronic devices

Cited by in corpus (5)

• Quasi-nondegenerate pump-probe magnetooptical experiment in GaAs/AlGaAs heterostructure based on spectral filtration
• Anomalous ambipolar transport in depleted GaAs nanowires
• Charge and spin transport over record distances in GaAs metallic n-type nanowires : I photocarrier transport in a dense Fermi sea
• Charge and spin transport over record distances in GaAs metallic n-type nanowires : II nonlinear charge transport
• Luminescence imaging of photoelectron spin precession during drift in p-type GaAs