816 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- École PolytechniqueFR110 papers
- Centre National de la Recherche ScientifiqueFR103 papers
- Université Paris-SaclayFR21 papers
- École Normale Supérieure Paris-SaclayFR13 papers
- Sapienza University of RomeIT10 papers
- Université Paris-SudFR8 papers
- Center for MathematicaL studies and their ApplicationsFR7 papers
- Institut Polytechnique de ParisFR6 papers
- Interdisciplinary Scientific Center J.-V. PonceletRU6 papers
- Northeastern UniversityUS6 papers
- Sorbonne UniversitéFR6 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR5 papers
25 papers · 1 filter
Ultrafast electrons dynamics reveal the high potential of InSe for hot carrier optoelectronics
Zhesheng Chen, Christine Giorgetti, Jelena Sjakste +9
We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxat…
Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions
T. Huong Dang, D. Quang To, E. Erina +4
We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical spin model, we show that, when Dresselh…
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
Chi-Kang Li, Marco Piccardo, Li-Shuo Lu +7
This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape…
Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers
Marco Piccardo, Chi-Kang Li, Yuh-Renn Wu +7
Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased ph…
Localization landscape theory of disorder in semiconductors I: Theory and modeling
Marcel Filoche, Marco Piccardo, Yuh-Renn Wu +3
We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on th…
Grain coarsening in two-dimensional phase-field models with an orientation field
Balint Korbuly, Tamas Pusztai, Herve Henry +3
In the literature, contradictory results have been published regarding the form of the limiting (long-time) grain size distribution (LGSD) that characterizes the late stage grain c…
Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density
F. Cadiz, D. Lagarde, P. Renucci +5
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At l…
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
Justin Iveland, Lucio Martinelli, Jacques Peretti +2
We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light emitting diode (LED) under electrical injection. Electro…
Theoretical and numerical study of lamellar eutectoid growth influenced by volume diffusion
Kumar Ankit, Abhik Choudhury, Cheng Qin +3
We investigate the lamellar growth of pearlite at the expense of austenite during the eutectoid transformation in steel. To begin with, we extend the Jackson-Hunt-type calculation…
An orientation-field model for polycristalline solidification with a singular coupling between order and orientation
Hervé Henry, Jesper Mellenthin, Mathis Plapp
The solidification of polycrystalline materials can be modelled by orientation-field models, which are formulated in terms of two continuous fields: a phase field that describes th…
Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa
J. S. Milne, I. Favorskiy, A. C. H. Rowe +2
The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 G…
Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds
L. Rondin, G. Dantelle, A. Slablab +9
We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively-charged NV$^…
Remarks on some open problems in phase-field modelling of solidification
Mathis Plapp
Three different topics in phase-field modelling of solidification are discussed, with particular emphasis on the limitations of the currently available modelling approaches. First,…
Cs-induced charge transfer on (2x4)-GaAs(001) studied by photoemission
O. E. Tereshchenko, D. Paget, P. Chiaradia +2
Cesium adsorption on 2x4 GaAs (001) was studied by photoemission and low energy electron diffraction. The different Cs induced changes of the As 3d and Ga 3d core level spectra sho…
Photoluminescence of single colour defects in 50 nm diamond nanocrystals
F. Treussart, V. Jacques, E. Wu +3
We used optical confocal microscopy to study optical properties of diamond 50 nm nanocrystals first irradiated with an electron beam, then dispersed as a colloidal solution and fin…
Quantitative phase-field modeling of two-phase solidification
R. Folch, M. Plapp
A phase-field model that allows for quantitative simulations of low-speed eutectic and peritectic solidification under typical experimental conditions is developed. Its cornerstone…
Quantitative Phase Field Model of Alloy Solidification
Blas Echebarria, Roger Folch, Alain Karma +1
We present a detailed derivation and thin interface analysis of a phase-field model that can accurately simulate microstructural pattern formation for low-speed directional solidif…
A mean-field kinetic lattice gas model of electrochemical cells
Marc-Olivier Bernard, Mathis Plapp, Jean-Francois Gouyet
We develop Electrochemical Mean-Field Kinetic Equations (EMFKE) to simulate electrochemical cells. We start from a microscopic lattice-gas model with charged particles, and build m…
Towards a quantitative phase-field model of two-phase solidification
R. Folch, M. Plapp
We construct a diffuse-interface model of two-phase solidification that quantitatively reproduces the classic free boundary problem on solid-liquid interfaces in the thin-interface…
Stability of hexagonal solidification patterns
Mathis Plapp, Marcus Dejmek
We investigate the dynamics of cellular solidification patterns using three-dimensional phase-field simulations. The cells can organize into stable hexagonal patterns or exhibit un…
Pattern Stability and Trijunction Motion in Eutectic Solidification
S. Akamatsu, M. Plapp, G. Faivre +1
We demonstrate by both experiments and phase-field simulations that lamellar eutectic growth can be stable for a wide range of spacings below the point of minimum undercooling at l…
Eutectic colony formation: A phase field study
Mathis Plapp, Alain Karma
Eutectic two-phase cells, also known as eutectic colonies, are commonly observed during the solidification of ternary alloys when the composition is close to a binary eutectic vall…
Linking Phase-Field and Atomistic Simulations to Model Dendritic Solidification in Highly Undercooled Melts
Jean Bragard, Alain Karma, Youngyih H. Lee +1
Even though our theoretical understanding of dendritic solidification is relatively well developed, our current ability to model this process quantitatively remains extremely limit…
Phase-field modeling of microstructural pattern formation during directional solidification of peritectic alloys without morphological instability
Tak Shing Lo, Alain Karma, Mathis Plapp
During the directional solidification of peritectic alloys, two stable solid phases (parent and peritectic) grow competitively into a metastable liquid phase of larger impurity con…