4.5k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- ETH ZurichCH46 papers
- University of BolognaIT11 papers
- Haute Ecole Arc IngénierieCH4 papers
- HES-SO ArcCH4 papers
- IBM Research - ZurichCH4 papers
- HES-SO University of Applied Sciences and Arts Western SwitzerlandCH3 papers
- National Institute for Materials ScienceJP3 papers
- École Polytechnique Fédérale de LausanneCH2 papers
- Fondazione Bruno KesslerIT2 papers
- Purdue University West LafayetteUS2 papers
- Rice UniversityUS2 papers
- University of Alabama in HuntsvilleUS2 papers
5 papers · 1 filter
Ab initio mobility of mono-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics
Youseung Lee, Sara Fiore, Mathieu Luisier
We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate single-layer MoS2 and WS2 u…
Quantum mechanical modeling of anharmonic phonon-phonon scattering in nanostructures
Yangyu Guo, Marc Bescond, Zhongwei Zhang +3
The coherent quantum effect becomes increasingly important in the heat dissipation bottleneck of semiconductor nanoelectronics with the characteristic size shrinking down to few na…
Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials
Christian Stieger, Aron Szabo, Teute Bunjaku +1
Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a sin…
Light from van der Waals quantum tunneling devices
Markus Parzefall, Áron Szabó, Takashi Taniguchi +3
The understanding of and control over light emission from quantum tunneling has challenged researchers for more than four decades due to the intricate interplay of electrical and o…
Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors
SungGeun Kim, Mathieu Luisier, Timothy B. Boykin +1
The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS)…