399 citations
- Northeastern UniversityUS5 papers
- Centre National de la Recherche ScientifiqueFR4 papers
- Delft University of TechnologyNL4 papers
- Scuola Normale SuperioreIT4 papers
- University of Duisburg-EssenDE4 papers
- Lancaster UniversityGB3 papers
- Landau Institute for Theoretical PhysicsRU3 papers
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14 papers · 1 filter
Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon
A. A. Kapustin, A. A. Shashkin, V. T. Dolgopolov +3
We find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron syste…
Double-exciton component of the cyclotron spin-flip mode in a quantum Hall ferromagnet
S. Dickmann, V. M. Zhilin
We report on the calculation of the cyclotron spin-flip excitation (CSFE) in a spin-polarized quantum Hall system at unit filling. This mode has a double-exciton component which co…
Filling factor dependence of the fractional quantum Hall effect gap
V. S. Khrapai, A. A. Shashkin, M. G. Trokina +5
We directly measure the chemical potential jump in the low-temperature limit when the filling factor traverses the nu = 1/3 and nu = 2/5 fractional gaps in two-dimensional (2D) ele…
Strongly enhanced effective mass in dilute two-dimensional electron systems: System-independent origin
A. A. Shashkin, A. A. Kapustin, E. V. Deviatov +2
We measure the effective mass in a dilute two-dimensional electron system in (111)-silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temp…
IR-active optical phonons in Pnma-1, Pnma-2 and R3c phases of LaMnO_{3+δ}
I. S. Smirnova, A. V. Bazhenov, T. N. Fursova +3
Infrared-active phonons in LaMnO_{3+δ} were studied by means of the reflection and transmission spectroscopy from 50 to 800 cm^{-1} at room temperature. Powder and ceramic samples…
Direct measurements of the fractional quantum Hall effect gaps
V. S. Khrapai, A. A. Shashkin, M. G. Trokina +5
We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the f…