93 citations
- Hiroshima UniversityJP1 paper
- Hiroshima University of EconomicsJP1 paper
- Institute of Semiconductor PhysicsRU1 paper
- Intel (United States)US1 paper
- Japan Synchrotron Radiation Research InstituteJP1 paper
- Okinawa Institute of Science and Technology Graduate UniversityJP1 paper
- Purdue University West LafayetteUS1 paper
- The University of TokyoJP1 paper
- Tokyo Medical UniversityJP1 paper
- Tokyo University of AgricultureJP1 paper
- University of Nebraska–LincolnUS1 paper
- University of Tokyo Health SciencesJP1 paper
3 papers
cond-mat.str-el2026
Stabilizing Itinerant Electrons in a Corner-Sharing Kagomé Oxide Nd4Os3ZnO14
Ryutaro Okuma, Yuita Fujisawa, Chia-Hsiu Hsu +8
Kagome oxides provide a fertile platform for exploring exotic electronic states arising from geometrical frustration and characteristic band topology. Here, we report the synthesis…
cond-mat.mes-hall2017★ 26 cited
Transient Nature of Negative Capacitance in Ferroelectric Field-Effect Transistors
Kwok Ng, Steven J. Hillenius, Alexei Gruverman
Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effec…
cond-mat.mes-hall2015★ 93 cited
Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs
Mehdi Salmani-Jelodar, Hesameddin Ilatikhameneh, SungGeun Kim +2
A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provid…