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most citedOptimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs

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cond-mat.str-el2026

Stabilizing Itinerant Electrons in a Corner-Sharing Kagomé Oxide Nd4Os3ZnO14

Ryutaro Okuma, Yuita Fujisawa, Chia-Hsiu Hsu +8

Kagome oxides provide a fertile platform for exploring exotic electronic states arising from geometrical frustration and characteristic band topology. Here, we report the synthesis…