activity
20052023
most citedTunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale

604 citations · 1.2k across the 18 of their papers we have counts for

collaborators

18 papers

cond-mat.mtrl-sci2023

Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric

Michele Conroy, Didrik René Småbråten, Colin Ophus +11

Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go w…

cond-mat.mtrl-sci2022★ 28 cited

Ultra-High Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

Conor J. McCluskey, Matthew G. Colbear, James P. V. McConville +12

Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research inte…

cond-mat.mtrl-sci2022

Topological polarization networking in uniaxial ferroelectrics

Y. Tikhonov, J. R. Maguire, C. J. McCluskey +8

Discovery of topological polarization textures has put ferroelectrics at the frontier of topological matter science. High-symmetry ferroelectric oxide materials allowing for freedo…

cond-mat.mtrl-sci2021

In-plane quasi-single-domain BaTiO via interfacial symmetry engineering

J. W. Lee, K. Eom, T. R. Paudel +18

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabric…

cond-mat.mtrl-sci2021★ 252 cited

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Yu Yun, Pratyush Buragohain, Ming Li +10

Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the n…

cond-mat.mtrl-sci2021★ 101 cited

Piezoelectricity in hafnia

Sangita Dutta, Pratyush Buragohain, Sebastjan Glinsek +7

Because of its compatibility with semiconductor-based technologies, hafnia (HfO) is today's most promising ferroelectric material for applications in electronics. Yet, knowle…