72 citations · 127 across the 10 of their papers we have counts for
10 papers
Temperature-doping phase diagram and endurance in Ce-doped HfO2
Amit Kumar Shah, Haidong Lu, Kawshan Hathurusingha +2
The structural and ferroelectric properties of epitaxial Hf1-xCexO2 (CHO) thin films in the ultrathin regime are investigated as a function of Ce concentration (5% <= x <= 20%) and…
Atom Probe Tomography as an Emerging Tool for Understanding Defect-driven Mechanisms in HfO-based Ferroelectrics
Kasper A. Hunnestad, Catherine Dubourdieu, Alexei Gruverman +1
HfO-based ferroelectrics are essential for the next generation of CMOS-compatible memory and logic devices, yet their performance is governed by a complex interplay between o…
Improper Ferroelectricity at the Monolayer Limit
Yilin Evan Li, Harikrishnan KP, Haidong Lu +20
Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are pr…
Antiferroelectric Hafnia Down to the 2D Limit
Xin Li, Guodong Ren, Haidong Lu +16
Antiferroelectricity is a material property characterized by alternating electric dipoles spontaneously ordered in antiparallel directions. Antiferroelectrics are promising for ene…
Imaging Local Effects of Voltage and Boron Doping on Spin Reversal in Antiferromagnetic Magnetoelectric Cr2O3 Thin Films and Devices
Adam Erickson, Syed Qamar Abbas Shah, Ather Mahmood +5
Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperat…
Dual mechanisms for transient capacitance anomaly in improper ferroelectrics
Xin Li, Yu Yun, Pratyush Buragohain +6
The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this wor…