Imaging Mechanism of Piezoresponse Force Microscopy in Capacitor Structures
arXiv:0801.2568 · doi:10.1063/1.2905266
Abstract
The image formation mechanism in Piezoresponse Force Microscopy (PFM) of capacitor structures is analyzed. We demonstrate that the spatial resolution is a bilinear function of film and top electrode thicknesses, and derive the corresponding analytical expressions. For many perovskites, the opposite contributions of d31 and d33 components can result in anomalous domain wall profiles. This analysis establishes the applicability limits of PFM for polarization dynamics studies in capacitors, and applies to other structural probes, including focused X-ray studies of capacitor structures.
20 pages, 3 figures, 2 tables, 1 Aappendix, to be submitted to Appl. Phys. Lett
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- Effect of the Intrinsic Width on the Piezoelectric Force Microscopy of a Single Ferroelectric Domain Wall
- Effective piezoelectric response of twin walls in ferroelectrics
- Impact of the domain structure in ferroelectric substrate on graphene conductance (authors' review)
- Graphene separation and stretching induced by piezoelectric effect of ferroelectric domains: impact on the conductance of graphene channel