activity
20052023
most citedTunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale

604 citations · 1.2k across the 18 of their papers we have counts for

collaborators
Showing 2021Show all

5 papers · 1 filter

cond-mat.mtrl-sci2021

In-plane quasi-single-domain BaTiO via interfacial symmetry engineering

J. W. Lee, K. Eom, T. R. Paudel +18

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabric…

cond-mat.mtrl-sci2021★ 252 cited

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Yu Yun, Pratyush Buragohain, Ming Li +10

Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the n…

cond-mat.mtrl-sci2021★ 101 cited

Piezoelectricity in hafnia

Sangita Dutta, Pratyush Buragohain, Sebastjan Glinsek +7

Because of its compatibility with semiconductor-based technologies, hafnia (HfO) is today's most promising ferroelectric material for applications in electronics. Yet, knowle…

cond-mat.mtrl-sci2021★ 3 cited

Persistent Ionic Photo-responses and Frank-Condon Mechanism in Proton-transfer Ferroelectrics

Xuanyuan Jiang, Xiao Wang, Pratyush Buragohain +8

Photoexcitation is well-known to trigger electronic metastable states and lead to phenomena like long-lived photoluminescence and photoconductivity. In contrast, persistent photo-r…

cond-mat.mtrl-sci2021★ 1 cited

Tip-induced domain protrusion in ferroelectric films with in-plane polarization

S. Kondovych, A. Gruverman, I. Luk'yanchuk

Charge manipulation and fabrication of stable domain patterns in ferroelectric materials by scanning probe microscopy open up broad avenues for the development of tunable electroni…