93 citations
- Hiroshima UniversityJP1 paper
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cond-mat.mes-hall2017★ 26 cited
Transient Nature of Negative Capacitance in Ferroelectric Field-Effect Transistors
Kwok Ng, Steven J. Hillenius, Alexei Gruverman
Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effec…
cond-mat.mes-hall2015★ 93 cited
Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs
Mehdi Salmani-Jelodar, Hesameddin Ilatikhameneh, SungGeun Kim +2
A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provid…