Forschungsverbund Berlin

output

20142026

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_{1 - x}

N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

62 citations

researchers with a paper here

L. Geelhaar14 · h 47
J. Lähnemann2 profiles13 · h 21
O. Brandt13 · h 51
O. Bierwagen2 profiles12 · h 38
A. Trampert2 profiles9 · h 52
P. Santos8 · h 32
M. Ramsteiner7 · h 46
T. Auzelle7 · h 13
J. Lopes2 profiles6 · h 24
K. Biermann6 · h 22
S. Ludwig2 profiles5 · h 14
A. Falkenstein4 · h 11

collaborating institutions

Paul Drude Institute for Solid State ElectronicsDE67 papers
Leibniz Institute for Crystal GrowthDE7 papers
RWTH Aachen UniversityDE6 papers
Weierstrass Institute for Applied Analysis and StochasticsDE6 papers
Centre National de la Recherche ScientifiqueFR4 papers
Balseiro InstituteAR3 papers
Bariloche Atomic CentreAR3 papers
Bowdoin CollegeUS3 papers
Cornell UniversityUS3 papers
Helmholtz-Zentrum Dresden-RossendorfDE3 papers
NTT Basic Research LaboratoriesJP3 papers
Pennsylvania State UniversityUS3 papers

Showing 2016Show all

1 paper · 1 filter

cond-mat.mes-hall2016★ 16 cited

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

Carsten Pfüller, Pierre Corfdir, Christian Hauswald +9

We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be pa…