output
20112026
most citedRoom-temperature ferroelectric switching of spin-to-charge conversion in GeTe

129 citations

Showing 2017Show all

8 papers · 1 filter

physics.app-ph2017★ 45 cited

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

Maria Spies, Martien I. Den Hertog, Pascal Hille +6

We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such…

cond-mat.mes-hall2017★ 6 cited

Optimization of ohmic contacts to n-type GaAs nanowires

Ludwig Hüttenhofer, Dionysios Xydias, Ryan B. Lewis +6

III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separat…

cond-mat.mes-hall2017★ 9 cited

Asymmetric tensor in low-symmetry two-dimensional hole systems

C. Gradl, R. Winkler, M. Kempf +8

The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to typical spin-1/2 electron system…

cond-mat.mes-hall2017★ 3 cited

Field effect induced mesoscopic devices in depleted two dimensional electron systems

N. Bachsoliani, S. Platonov, A. D. Wieck +1

Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs/AlGaAs heterostructure enable a large variety of applications from fundamental research to h…

math.NA2017★ 50 cited

ParMooN - a modernized program package based on mapped finite elements

Ulrich Wilbrandt, Clemens Bartsch, Naveed Ahmed +11

{\sc ParMooN} is a program package for the numerical solution of elliptic and parabolic partial differential equations. It inherits the distinct features of its predecessor {\sc Mo…

cond-mat.mes-hall2017★ 14 cited

Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency

F. Feix, T. Flissikowski, K. K. Sabelfeld +5

We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN nanowires…

cond-mat.mtrl-sci2017★ 24 cited

In/GaN(0001)- adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

C. Chèze, F. Feix, M. Anikeeva +5

We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorba…

nlin.CD2017★ 16 cited

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice

Zhizhen Yin, Helun Song, Yaohui Zhang +5

Noise-enhanced chaos in a doped, weakly coupled GaAs/Al_{0.45}Ga_{0.55}As superlattice has been observed at room temperature in experiments as well as in the results of the simulat…