315 citations
- Technische Universität DresdenDE14 papers
- Helmholtz-Zentrum Dresden-RossendorfDE3 papers
- Center for Advancing Electronics DresdenDE2 papers
- ETH ZurichCH2 papers
- Forschungszentrum JülichDE2 papers
- Georgia Institute of TechnologyUS2 papers
- Institute of NeuroinformaticsCH2 papers
- Madrid Institute for Advanced StudiesES2 papers
- Munich University of Applied SciencesDE2 papers
- RWTH Aachen UniversityDE2 papers
- State Key Laboratory of Electronic Thin Films and Integrated Devices2 papers
- Technion – Israel Institute of TechnologyIL2 papers
Showing 2021 · physics.app-phShow all
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physics.app-ph2021★ 151 cited
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
Benjamin Max, Michael Hoffmann, Halid Mulaosmanovic +2
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorph…
physics.app-ph2021★ 21 cited
On the Performance of Dual-Gate Reconfigurable Nanowire Transistors
Bin Sun, Benjamin Richstein, Patrick Liebisch +5
We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this…