315 citations
- Technische Universität DresdenDE14 papers
- Helmholtz-Zentrum Dresden-RossendorfDE3 papers
- Center for Advancing Electronics DresdenDE2 papers
- ETH ZurichCH2 papers
- Forschungszentrum JülichDE2 papers
- Georgia Institute of TechnologyUS2 papers
- Institute of NeuroinformaticsCH2 papers
- Madrid Institute for Advanced StudiesES2 papers
- Munich University of Applied SciencesDE2 papers
- RWTH Aachen UniversityDE2 papers
- State Key Laboratory of Electronic Thin Films and Integrated Devices2 papers
- Technion – Israel Institute of TechnologyIL2 papers
Showing 2022 · cond-mat.mtrl-sciShow all
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cond-mat.mtrl-sci2022
Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +4
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was…
cond-mat.mtrl-sci2022★ 48 cited
Investigating charge trapping in ferroelectric thin films through transient measurements
Suzanne Lancaster, Patrick D Lomenzo, Moritz Engl +4
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique…