77 citations · 329 across the 10 of their papers we have counts for
10 papers
Quantization of mode shifts in nanocavities integrated with atomically thin sheets
N. Fang, D. Yamashita, S. Fujii +5
The unique optical properties of two-dimensional layered materials are attractive for achieving increased functionality in integrated photonics. Owing to the van der Waals nature,…
Deterministic transfer of optical-quality carbon nanotubes for atomically defined technology
K. Otsuka, N. Fang, D. Yamashita +3
When continued device scaling reaches the ultimate limit imposed by atoms, technology based on atomically precise structures is expected to emerge. Device fabrication will then req…
Full energy spectra of interface state densities for n- and p-type MoS2 field-effect transistors
N. Fang, S. Toyoda, T. Taniguchi +2
Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFE…
Quantum-mechanical effect in atomically thin MoS2 FET
Nan Fang, Kosuke Nagashio
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics t…
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
Weisheng Li, Jian Zhou, Songhua Cai +21
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-qua…
Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule
Nan Fang, Kosuke Nagashio
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics.…
Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET
Koki Taniguchi, Nan Fang, Kosuke Nagashio
Understanding interface properties in MoS2 field effect transistors with a high-k gate insulator is critical for improving the performance of the device. Here, by applying the time…
2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p-WSe Source
Junyang He, Nan Fang, Keigo Nakamura +4
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distan…
Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
Nan Fang, Kosuke Nagashio
Although MoS2 field-effect transistors (FETs) with high-k dielectrics are promising for electron device applications, the underlying physical origin of interface degradation remain…
Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics
Nan Fang, Kosuke Nagashio, Akira Toriumi
Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancie…