77 citations · 329 across the 10 of their papers we have counts for
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Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule
Nan Fang, Kosuke Nagashio
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics.…
Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET
Koki Taniguchi, Nan Fang, Kosuke Nagashio
Understanding interface properties in MoS2 field effect transistors with a high-k gate insulator is critical for improving the performance of the device. Here, by applying the time…
2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p-WSe Source
Junyang He, Nan Fang, Keigo Nakamura +4
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distan…
Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
Nan Fang, Kosuke Nagashio
Although MoS2 field-effect transistors (FETs) with high-k dielectrics are promising for electron device applications, the underlying physical origin of interface degradation remain…