77 citations · 329 across the 10 of their papers we have counts for
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physics.app-ph2019★ 13 cited
Quantum-mechanical effect in atomically thin MoS2 FET
Nan Fang, Kosuke Nagashio
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics t…
physics.app-ph2019★ 1 cited
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
Weisheng Li, Jian Zhou, Songhua Cai +21
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-qua…