77 citations · 329 across the 10 of their papers we have counts for
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cond-mat.mtrl-sci2018★ 58 cited
Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule
Nan Fang, Kosuke Nagashio
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics.…
cond-mat.mtrl-sci2018★ 48 cited
Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
Nan Fang, Kosuke Nagashio
Although MoS2 field-effect transistors (FETs) with high-k dielectrics are promising for electron device applications, the underlying physical origin of interface degradation remain…
cond-mat.mtrl-sci2016★ 17 cited
Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics
Nan Fang, Kosuke Nagashio, Akira Toriumi
Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancie…