292 citations · 796 across the 18 of their papers we have counts for
15 papers · 1 filter
Strong and Engineerable Optical Anisotropy in Easily Integrable Epitaxial SrO(SrTiO 3 ) N Ruddlesden--Popper Thin Layers
Mohamed Oussama Bounab, Clarisse Furgeaud, Sébastien Cueff +7
Optical anisotropy is a key property for numerous photonic devices. However, bulk anisotropic materials suitable for such applications remain relatively scarse and are often challe…
Ferroelectricity in tetragonal ZrO thin films
Ali El Boutaybi, Thomas Maroutian, Ludovic Largeau +10
We report on the crystal structure and ferroelectric properties of epitaxial ZrO films ranging from 7 to 42 nm thickness grown on LaSrMnO-buffered (110)-o…
Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO2 by surface energy
Ali El Boutaybi, Thomas Maroutian, Ludovic Largeau +2
Doped HfO2 and HfO2-ZrO2 compounds are gaining significant interest thanks to their ferroelectric properties in ultrathin films. Here, we show that ZrO2 could be a playground for d…
Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Konstantinos Pantzas, Grégoire Beaudoin, Myriam Bailly +7
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the templat…
Zinc-Blende group III-V/group IV epitaxy: importance of the miscut
C. Cornet, S. Charbonnier, I. Lucci +15
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with t…
AlSiN, a new Nitride compound
R. Dagher, L. Lymperakis, V. Delaye +4
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350C and 1550$^\cir…
Surface acoustic wave driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers
Laura Thevenard, Catherine Gourdon, Jean-Yves Prieur +5
Interdigitated transducers were used to generate and detect surface acoustic waves on a thin layer of (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute ma…
Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer
Tarik Niazi, Mathieu Cormier, Damien Lucot +4
We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. Th…
Optical spectroscopy of two-dimensional layered perovskite
K. Gauthron, J. S. Lauret, L. Doyennette +8
We report on optical spectroscopy (photoluminescence and photoluminescence excitation) on two-dimensional self-organized layers of perovs…
Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers
M. Cubukcu, H. J. von Bardeleben, Kh. Khazen +4
Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisot…
Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
Aristide Lemaître, Audrey Miard, Laurent Travers +6
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or…
Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As
Laura Thevenard, Ludovic Largeau, Olivia Mauguin +3
The magnetic properties of (Ga,Mn)As thin films depend on both the Mn doping level and the carrier concentration. Using a post growth hydrogenation process we show that it is possi…
Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy
Laura Thevenard, Ludovic Largeau, Olivia Mauguin +4
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magne…
Tuning the ferromagnetic properties of hydrogenated GaMnAs
Laura Thevenard, Ludovic Largeau, Olivia Mauguin +2
Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin G…
Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures
Jose Coelho, Gilles Patriarche, Frank Glas +3
We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between…