65 citations · 73 across the 3 of their papers we have counts for
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Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers
M. Cubukcu, H. J. von Bardeleben, Kh. Khazen +4
Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisot…
Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
Aristide Lemaître, Audrey Miard, Laurent Travers +6
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or…
Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures
Jose Coelho, Gilles Patriarche, Frank Glas +3
We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between…