794 citations · 3k across the 33 of their papers we have counts for
27 papers · 1 filter
Dispersive Readout of a SiMOS Quantum Dot Using a Flip-Chip Integrated Microwave Resonator
Vo Kim Hieu Van, Santiago Serrano, Cédric Bohémier +11
Heterogeneous integration provides a promising route to combine semiconductor quantum dot devices and superconducting microwave circuits, while allowing each component to be fabric…
Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Md. Mamunur Rahman, Ensar Vahapoglu, Kok Wai Chan +16
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum…
Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation
Aaquib Shamim, Scott D. Liles, Joe Hillier +10
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and…
Coupling a Ge nuclear spin to an electrostatically defined quantum dot
Paul Steinacker, Gauri Goenka, Rocky Yue Su +17
Single nuclear spins in silicon are a promising resource for quantum technologies due to their long coherence times and excellent control fidelities. Qubits and qudits have been en…
Enhancement of Electric Drive in Silicon Quantum Dots with Electric Quadrupole Spin Resonance
Philip Y. Mai, Pedro H. Pereira, Lucas Andrade Alonso +19
Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or…
A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling
Wee Han Lim, Tuomo Tanttu, Tony Youn +12
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance toward…
A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
Paul Steinacker, Nard Dumoulin Stuyck, Wee Han Lim +24
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially via…
Methods for transverse and longitudinal spin-photon coupling in silicon quantum dots with intrinsic spin-orbit effect
Kevin S. Guo, MengKe Feng, Jonathan Y. Huang +7
In a full-scale quantum computer with a fault-tolerant architecture, having scalable, long-range interaction between qubits is expected to be a highly valuable resource. One promis…
Control of dephasing in spin qubits during coherent transport in silicon
MengKe Feng, Jun Yoneda, Wister Huang +12
One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectiv…
Implementation of the SMART protocol for global qubit control in silicon
Ingvild Hansen, Amanda E. Seedhouse, Kok Wai Chan +6
Quantum computing based on spins in the solid state allows for densely-packed arrays of quantum bits. While high-fidelity operation of single qubits has been demonstrated with indi…
Coherent spin qubit transport in silicon
J. Yoneda, W. Huang, M. Feng +12
A fault-tolerant quantum processor may be configured using stationary qubits interacting only with their nearest neighbours, but at the cost of significant overheads in physical qu…
Bolometer operating at the threshold for circuit quantum electrodynamics
R. Kokkoniemi, J. -P. Girard, D. Hazra +7
Radiation sensors based on the heating effect of the absorbed radiation are typically relatively simple to operate and flexible in terms of the input frequency. Consequently, they…
Superconducting charge sensor coupled to an electron layer in silicon
Máté Jenei, Ruichen Zhao, Kuan Y. Tan +8
Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We stud…
Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector
Máté Jenei, Elina Potanina, Ruichen Zhao +7
We analyze charge fluctuations in a parasitic state strongly coupled to a superconducting Josephson-junction-based charge detector. The charge dynamics of the state resembles that…
Silicon quantum processor unit cell operation above one Kelvin
C. H. Yang, R. C. C. Leon, J. C. C. Hwang +12
Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to…
Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot
R. C. C. Leon, C. H. Yang, J. C. C. Hwang +12
Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, o…
Single-spin qubits in isotopically enriched silicon at low magnetic field
R. Zhao, T. Tanttu, K. Y. Tan +13
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave…
Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
Tuomo Tanttu, Bas Hensen, Kok Wai Chan +9
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures in…
Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
C. H. Yang, K. W. Chan, R. Harper +12
The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semicond…
Fidelity benchmarks for two-qubit gates in silicon
W. Huang, C. H. Yang, K. W. Chan +10
Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum i…
Three-waveform bidirectional pumping of single electrons with a silicon quantum dot
Tuomo Tanttu, Alessandro Rossi, Kuan Yen Tan +4
Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the I…
Electron counting in a silicon single-electron pump
Tuomo Tanttu, Alessandro Rossi, Kuan Yen Tan +4
We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in ex…
An accurate single-electron pump based on a highly tunable silicon quantum dot
A. Rossi, T. Tanttu, K. Y. Tan +7
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Her…
Single-shot readout of an electron spin in silicon
Andrea Morello, Jarryd J. Pla, Floris A. Zwanenburg +12
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for th…