Dispersive Readout of a SiMOS Quantum Dot Using a Flip-Chip Integrated Microwave Resonator
arXiv:2607.14559
The paper demonstrates a flip‑chip integration of a silicon MOS double quantum‑dot device with a superconducting microwave resonator, enabling dispersive readout of charge transitions with a signal‑to‑noise ratio of 1 in roughly 0.3 ms.
Abstract
Heterogeneous integration provides a promising route to combine semiconductor quantum dot devices and superconducting microwave circuits, while allowing each component to be fabricated using an optimized process flow. Here, we demonstrate a flip-chip integrated platform for dispersive readout of silicon metal-oxide semiconductor (SiMOS) quantum dot devices. A SiMOS double quantum dot chip is bonded to a superconducting aluminum resonator chip using indium bump interconnects to enable microwave coupling to the quantum dot gate. We show that the developed flip-chip process is compatible with cryogenic operation of both the SiMOS device and the superconducting resonator, and demonstrate resonator-based detection of charge transitions in the quantum dot system. The readout signal-to-noise ratio follows a dependence of with the integration time, reaching SNR = 1 at an integration time of approximately 0.3 ms. These results establish flip-chip bonding as a viable integration approach for SiMOS quantum dot devices operating at both dc and microwave frequencies, with potential applications for resonator-based techniques such as spin-photon coupling.
6 pages, 3 figures