49 citations · 50 across the 4 of their papers we have counts for
4 papers
UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107
Sandeep Kumar, Anamika Singh Pratiyush, Surani Bin Dolmanan +3
We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contact…
Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon
Hareesh Chandrasekar, Sandeep Kumar, K. L. Ganapathi +9
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON Al…
Electron mobility in InxGa1-xN channel HEMTs
Vikash K. Singh, Digbijoy N. Nath
In this letter, we report on the theoretical investigations of electron mobility in practically viable designs of InxGa1-xN channel high electron mobility transistors (HEMT). Carri…
Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion
Pil Sung Park, Kongara M. Reddy, Digbijoy N. Nath +3
A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak…