274 citations · 1.3k across the 28 of their papers we have counts for
28 papers
Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
Jishnu Ghosh, Shubham Parate, Arup Basak +6
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlay…
Laser Etch Enabled Active Embedded Microfluidic Cooling in -GaO
Shonkho Shuvro, Roopa Jayaramaiah, Rangarajan Muralidharan +2
We demonstrate active embedded microfluidic cooling in -GaO. We employ a cost-effective infra-red laser etch setup to achieve controlled etching of micro-channels in 500…
UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction
Swanand V. Solanke, Rohith Soman, Muralidharan Rangarajan +2
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating α-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOC…
Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm
Sandeep Kumar, Sandeep Vura, Surani B. Dolmanan +3
We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by u…
Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs
Sandeep Kumar, Surani B. Dolmanan, Sudhiranjan Tripathy +2
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the ga…
Investigation of Ta2O5 as an alternative high \k{appa} dielectric for InAlN/GaN MOS HEMT on Si
Sandeep Kumar, Himanshu Kumar, Sandeep Vura +6
We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputte…