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20102025
most citedHigh Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector

274 citations · 1.3k across the 28 of their papers we have counts for

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cond-mat.mes-hall2017★ 274 cited

High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector

Anamika Singh Pratiyush, Sriram Krishnamoorthy, Swanand Vishnu Solanke +4

In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin…

cond-mat.mes-hall2015★ 54 cited

Surface States Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

Shubhadeep Bhattacharjee, Kolla Lakshmi Ganapathi, Digbijoy N. Nath +1

Variability and lack of control in the nature of contacts between metal/MoS2 interface is a major bottleneck in the realisation of high-performance devices based on layered materia…

cond-mat.mes-hall2015★ 1 cited

Electron mobility in few-layer MoxW1-xS2

Hareesh Chandrasekar, Digbijoy Neelim Nath

In this letter, we theoretically study the electron mobility in few-layer MoxW1-xS2 as limited by various scattering mechanisms. The room temperature energy-dependent scattering ti…

cond-mat.mes-hall2013★ 51 cited

Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures

D. N. Nath, P. S. Park, Z. C. Yang +1

In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers…

cond-mat.mes-hall2011★ 169 cited

Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride

Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath +3

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interfac…