49 citations · 51 across the 5 of their papers we have counts for
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Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon
Hareesh Chandrasekar, Sandeep Kumar, K. L. Ganapathi +9
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON Al…
Electron mobility in InxGa1-xN channel HEMTs
Vikash K. Singh, Digbijoy N. Nath
In this letter, we report on the theoretical investigations of electron mobility in practically viable designs of InxGa1-xN channel high electron mobility transistors (HEMT). Carri…
Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion
Pil Sung Park, Kongara M. Reddy, Digbijoy N. Nath +3
A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak…