274 citations · 1.3k across the 28 of their papers we have counts for
14 papers · 1 filter
Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
Jishnu Ghosh, Shubham Parate, Arup Basak +6
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlay…
Microwave Irradiation Assisted Deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics
Piyush Jaiswal, Usman Ul Muazzam, Anamika Singh Pratiyush +5
We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a…
Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon
Hareesh Chandrasekar, Sandeep Kumar, K. L. Ganapathi +9
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON Al…
Making Consistent Contacts to Graphene: Effect of Architecture and Growth Induced Defects
Krishna Bharadwaj B, Rudra Pratap, Srinivasan Raghavan
The effect of contact architecture, graphene defect density and metal-semiconductor work function difference on resistivity of metal-graphene contacts have been investigated. An ar…
Optical Phonon Limited High Field Transport in Layered Materials
Hareesh Chandrasekar, Kolla L. Ganapathi, Shubhadeep Bhattacharjee +2
An optical phonon limited velocity model has been employed to investigate high-field transport in a selection of layered 2D materials for both, low-power logic switches with scaled…
Electron mobility in InxGa1-xN channel HEMTs
Vikash K. Singh, Digbijoy N. Nath
In this letter, we report on the theoretical investigations of electron mobility in practically viable designs of InxGa1-xN channel high electron mobility transistors (HEMT). Carri…
Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage
Sanyam Bajaj, Ting-Hsiang Hung, Fatih Akyol +2
We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed…
Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1
Lu Ma, Digbijoy N. Nath, Edwin W. Lee +4
We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter lengt…
Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions
Edwin W. Lee, Lu Ma, Digbijoy N. Nath +3
The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was…
p-type doping in CVD grown MoS2 using Nb
M. Laskar, D. N. Nath, L. Ma +12
We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient…
Large Area Single Crystal (0001) Oriented MoS2 Thin Films
Masihhur R. Laskar, Lu Ma, ShanthaKumar K +6
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and techno…
Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion
Pil Sung Park, Kongara M. Reddy, Digbijoy N. Nath +3
A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak…
Lateral Confinement of Electrons in Vicinal N-polar AlGaN/GaN Heterostructure
Digbijoy N. Nath, Stacia Keller, Eric Hsieh +3
We studied orientation dependent transport in vicinal N-polar AlGaN/GaN heterostructures. We observed significant anisotropy in the current carrying charge parallel and perpendicul…
Polarization-engineered GaN/InGaN/GaN tunnel diodes
Sriram Krishnamoorthy, Digbijoy N. Nath, Fatih Akyol +3
We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Krame…