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20132020
most citedUV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

49 citations · 51 across the 5 of their papers we have counts for

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physics.app-ph20201 cited

UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

Swanand V. Solanke, Rohith Soman, Muralidharan Rangarajan +2

In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating α-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOC…

physics.app-ph2019

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm

Sandeep Kumar, Sandeep Vura, Surani B. Dolmanan +3

We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by u…

physics.app-ph2019

Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs

Sandeep Kumar, Surani B. Dolmanan, Sudhiranjan Tripathy +2

In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the ga…

physics.app-ph2018

Investigation of Ta2O5 as an alternative high \k{appa} dielectric for InAlN/GaN MOS HEMT on Si

Sandeep Kumar, Himanshu Kumar, Sandeep Vura +6

We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputte…

physics.app-ph2018

Multi-layer MoS2/GaN UV-Visible photodetector with observation of MoS2 band edge in spectral responsivity

Swanand Solanke, Shashwat Rathakanthiwar, 1Anisha Kalra +3

We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge…

physics.app-ph2018

A performance comparison between \b{eta}-Ga2O3 and GaN High Electron Mobility Transistors

Sandeep Kumar, Anamika Singh Pratiyush, Rangarajan Muralidharan +1

In this letter, we report on the quantitative estimates of various metrics of performance for \b{eta}-Ga2O3 based High Electron Mobility Transistor (HEMT) for radio frequency (RF)…