Laser Etch Enabled Active Embedded Microfluidic Cooling in -GaO
arXiv:2304.02645
Abstract
We demonstrate active embedded microfluidic cooling in -GaO. We employ a cost-effective infra-red laser etch setup to achieve controlled etching of micro-channels in 500 um thick -GaO substrate. The micro-channels are about 210 um deep and 340 um wide. Resistive heating is used as proof-of-concept. At a water flow rate of 50 ml/min, a 50% reduction in surface temperature from ~140C to ~72C is achieved for 3.5 W of input power. The experimental observations are backed by thermal simulation. This work is expected to lead to a new paradigm in thermal management in emerging -GaO devices.
10 pages, 5 figures