274 citations · 462 across the 10 of their papers we have counts for
10 papers
Laser Etch Enabled Active Embedded Microfluidic Cooling in -GaO
Shonkho Shuvro, Roopa Jayaramaiah, Rangarajan Muralidharan +2
We demonstrate active embedded microfluidic cooling in -GaO. We employ a cost-effective infra-red laser etch setup to achieve controlled etching of micro-channels in 500…
Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm
Sandeep Kumar, Sandeep Vura, Surani B. Dolmanan +3
We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by u…
Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs
Sandeep Kumar, Surani B. Dolmanan, Sudhiranjan Tripathy +2
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the ga…
Investigation of Ta2O5 as an alternative high \k{appa} dielectric for InAlN/GaN MOS HEMT on Si
Sandeep Kumar, Himanshu Kumar, Sandeep Vura +6
We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputte…
A performance comparison between \b{eta}-Ga2O3 and GaN High Electron Mobility Transistors
Sandeep Kumar, Anamika Singh Pratiyush, Rangarajan Muralidharan +1
In this letter, we report on the quantitative estimates of various metrics of performance for \b{eta}-Ga2O3 based High Electron Mobility Transistor (HEMT) for radio frequency (RF)…
MBE grown Self-Powered \b{eta}-Ga2O3 MSM Deep-UV Photodetector
Anamika Singh Pratiyush, Sriram Krishnamoorthy, Sandeep Kumar +4
We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-…
Microwave Irradiation Assisted Deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics
Piyush Jaiswal, Usman Ul Muazzam, Anamika Singh Pratiyush +5
We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a…
UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107
Sandeep Kumar, Anamika Singh Pratiyush, Surani Bin Dolmanan +3
We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contact…
Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon
Hareesh Chandrasekar, Sandeep Kumar, K. L. Ganapathi +9
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON Al…
High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector
Anamika Singh Pratiyush, Sriram Krishnamoorthy, Swanand Vishnu Solanke +4
In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin…