activity
20172023
most citedUV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

49 citations · 50 across the 3 of their papers we have counts for

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Showing 2017Show all

4 papers · 1 filter

cond-mat.mtrl-sci2017

Microwave Irradiation Assisted Deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

Piyush Jaiswal, Usman Ul Muazzam, Anamika Singh Pratiyush +5

We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a…

physics.app-ph2017★ 49 cited

UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

Sandeep Kumar, Anamika Singh Pratiyush, Surani Bin Dolmanan +3

We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contact…

cond-mat.mtrl-sci2017★ 1 cited

Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon

Hareesh Chandrasekar, Sandeep Kumar, K. L. Ganapathi +9

We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON Al…

cond-mat.mes-hall2017

High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector

Anamika Singh Pratiyush, Sriram Krishnamoorthy, Swanand Vishnu Solanke +4

In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin…