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20132025
most citedUV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

49 citations · 51 across the 6 of their papers we have counts for

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cond-mat.mtrl-sci2013

Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion

Pil Sung Park, Kongara M. Reddy, Digbijoy N. Nath +3

A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak…