344 citations · 674 across the 12 of their papers we have counts for
13 papers · 1 filter
Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost
Alla Chikina, Dennis V. Christensen, Vladislav Borisov +10
Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant…
Time-reversal symmetry breaking driven topological phase transition in EuB
Shun-Ye Gao, Sheng Xu, Hang Li +16
The interplay between time-reversal symmetry (TRS) and band topology plays a crucial role in topological states of quantum matter. In time-reversal-invariant (TRI) systems, the inv…
Atomic-scale insights into electro-steric substitutional chemistry of cerium oxide
Haiwu Zhang, Ivano E. Castelli, Simone Santucci +3
Cerium oxide (ceria, CeO2) is one of the most promising mixed ionic and electronic conducting materials. Previous atomistic analysis has covered widely the effects of substitution…
On the emergence of conductivity at SrTiO3-based oxide interfaces -- an in-situ study
Merlin von Soosten, Dennis Valbjørn Christensen, Chang-Beom Eom +3
Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link be…
Diluted Oxide Interfaces with Tunable Ground States
Yulin Gan, Dennis Valbjørn Christensen, Yu Zhang +14
The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of mu…
Direct demonstration of the emergent magnetism resulting from the multivalence Mn in a LaMnO3 epitaxial thin film system
Wei Niu, Wenqing Liu, Min Gu +14
Atomically engineered oxide heterostructures provide a fertile ground for creating novel states. For example, a two-dimensional electron gas at the interface between two oxide insu…