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Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
Babak Fallahazad, Kayoung Lee, Sangwoo Kang +10
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphen…
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS on oxide
Amithraj Valsaraj, Jiwon Chang, Amritesh Rai +2
Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS layers on dielectrics, in particular in this…
Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator
Bahniman Ghosh, Rik Dey, Leonard F. Register +1
We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular a…
Voltage Induced Switching of Nanomagnets in Topological Insulator Magnetoelectric Devices through Ruderman-Kittel-Kasuya-Yosida Interactions
Bahniman Ghosh, Urmimala Roy, Rik Dey +3
In this letter, we demonstrate switching of nanomagnets through RKKY interactions in topological insulator-based magnetoelectric devices. The switching speed is dependent on the si…
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs
Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee
We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballist…