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20092020
most citedQuantum Resistance Standard Based on Epitaxial Graphene

489 citations · 1.8k across the 16 of their papers we have counts for

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13 papers · 1 filter

cond-mat.mes-hall2017

Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC

Cassandra Chua, Arseniy Lartsev, Jinggao Sui +9

We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from cha…

cond-mat.mes-hall2015★ 17 cited

Influence of impurity spin dynamics on quantum transport in epitaxial graphene

Samuel Lara-Avila, Sergey Kubatkin, Oleksiy Kashuba +6

Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of ep…

cond-mat.mes-hall2015★ 21 cited

Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements

J. Huang, J. A. Alexander-Webber, A. M. R. Baker +8

We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increase…

cond-mat.mes-hall2014★ 18 cited

Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene

J. Huang, J. A. Alexander-Webber, T. J. B. M. Janssen +8

Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak loc…

cond-mat.mes-hall2013★ 51 cited

Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene

J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen +7

We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, an…

cond-mat.mes-hall2013★ 88 cited

Quantum resistance metrology using graphene

T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila +2

In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this ma…

cond-mat.mes-hall2012

Energy loss rates of hot Dirac fermions in epitaxial, exfoliated and CVD graphene

A. M. R. Baker J. A. Alexander-Webber, T. Altebaeumer, S. D. McMullan +8

Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown…

cond-mat.mes-hall2012★ 81 cited

Precision comparison of the quantum Hall effect in graphene and gallium arsenide

T. J. B. M. Janssen, J. M. Williams, N. E. Fletcher +6

The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference…

cond-mat.mes-hall2011★ 78 cited

Graphene, universality of the quantum Hall effect and redefinition of the SI system

T. J. B. M. Janssen, N. E. Fletcher, R. Goebel +6

The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental co…

cond-mat.mes-hall2011★ 152 cited

Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light

Samuel Lara-Avila, Kasper Moth-Poulsen, Rositza Yakimova +4

Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, inter…

cond-mat.mes-hall2010★ 124 cited

Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

T. J. B. M. Janssen, A. Tzalenchuk, R. Yakimova +4

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacit…

cond-mat.mes-hall2009★ 489 cited

Quantum Resistance Standard Based on Epitaxial Graphene

Alexander Tzalenchuk, Samuel Lara-Avila, Alexei Kalaboukhov +7

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision cons…

cond-mat.mes-hall2009★ 489 cited

SiC Graphene Suitable For Quantum Hall Resistance Metrology

Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo +5

We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the…