152 citations · 1.4k across the 36 of their papers we have counts for
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Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors
G. Liu, S. L. Rumyantsev, C. Jiang +2
We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change…
Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors
Maxim A. Stolyarov, Guanxiong Liu, Sergey L. Rumyantsev +2
We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). Th…
Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures
S. L. Rumyantsev, C. Jiang, R. Samnakay +2
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-g…