152 citations · 1.4k across the 36 of their papers we have counts for
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cond-mat.mes-hall2013★ 137 cited
Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors
J. Renteria, R. Samnakay, S. L. Rumyantsev +3
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 chann…
cond-mat.mes-hall2013★ 34 cited
Performance Limits for Field Effect Transistors as Terahertz Detectors
V. Yu. Kachorovskii, S. L. Rumyantsev, W. Knap +1
We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FET) in the regime of broadband detection. The maximal responsivity is…