294 citations · 1.7k across the 19 of their papers we have counts for
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Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim +11
We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well i…
Extending the coherence of a quantum dot hybrid qubit
Brandur Thorgrimsson, Dohun Kim, Yuan-Chi Yang +10
Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T…
Identifying single electron charge sensor events using wavelet edge detection
J. R. Prance, B. J. Van Bael, C. B. Simmons +5
The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for hi…
High fidelity resonant gating of a silicon based quantum dot hybrid qubit
Dohun Kim, D. R. Ward, C. B. Simmons +5
Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest a…
Microwave-driven coherent operations of a semiconductor quantum dot charge qubit
Dohun Kim, D. R. Ward, C. B. Simmons +8
A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is n…
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
Dohun Kim, Zhan Shi, C. B. Simmons +9
The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have…
Fast coherent manipulation of three-electron states in a double quantum dot
Zhan Shi, C. B. Simmons, Daniel R. Ward +9
A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of el…
Coherent Quantum Oscillations in a Silicon Charge Qubit
Zhan Shi, C. B. Simmons, Daniel. R. Ward +10
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomoge…
Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot
J. R. Prance, Zhan Shi, C. B. Simmons +8
We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade…
Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot
Zhan Shi, C. B. Simmons, J. R. Prance +6
We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective tw…
Tunable spin-selective loading of a silicon spin qubit
C. B. Simmons, J. R. Prance, B. J. Van Bael +8
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attr…
Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot
Madhu Thalakulam, C. B. Simmons, B. J. Van Bael +6
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and…
Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
C. B. Simmons, Teck Seng Koh, Nakul Shaji +12
We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states t…
Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot
Teck Seng Koh, C. B. Simmons, M. A. Eriksson +2
Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experim…
Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
Madhu Thalakulam, C. B. Simmons, B. M. Rosemeyer +5
We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-ele…
Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot
C. B. Simmons, Madhu Thalakulam, B. M. Rosemeyer +8
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Cha…
Single-electron quantum dot in Si/SiGe with integrated charge-sensing
C. B. Simmons, Madhu Thalakulam, Nakul Shaji +7
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si…
Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot
Nakul Shaji, C. B. Simmons, Madhu Thalakulam +11
Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current thr…